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Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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Sensors and Materials, Volume 21, Number 7 (2009)
Copyright(C) MYU K.K.
pp. 393-402
S&M779 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2009.597
Published: October 22, 2009

Fabrication of Room-Temperature-Operating Carbon Nanotube Single-Charge Transistors [PDF]

Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto

(Received February 25, 2009; Accepted May 12, 2009)

Keywords: carbon nanotube, field-effect transistor, single-electron transistor, single-hole transistor, room temperature

Single-electron and single-hole transistors (SETs/SHTs) using carbon nanotube field-effect transistors (CNT-FETs) have promising practical applications owing to their unique electrical characteristics and potential for room-temperature operation. To realize a charging energy larger than the thermal energy, very small islands are necessary on a carbon nanotube channel. In this article, we review two recent challenges in fabricating room-temperature-operating CNT-SETs/SHTs. One is the introduction of defects into the carbon nanotube channel surface, and the other is the realization of a CNT-FET with an extremely small channel length. All the devices described here clearly show Coulomb oscillations even at room temperature. Room-temperature-operating CNT-SETs/SHTs are expected for applications in logic circuits and high-sensitivity chemical sensors

Corresponding author: Yasuhide Ohno


Cite this article
Yasuhide Ohno, Kenzo Maehashi, Koichi Inoue and Kazuhiko Matsumoto, Fabrication of Room-Temperature-Operating Carbon Nanotube Single-Charge Transistors, Sens. Mater., Vol. 21, No. 7, 2009, p. 393-402.



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