Nonvolatile memory devices play a pivotal role within sensor systems, serving as integral components that significantly enhance the efficiency, reliability, and overall performance of these advanced technologies. In this paper, we present a nonvolatile oxide-based resistive memory device employing a chemical displacement technique (CDT) for copper thin film as the metal electrode. The utilization of CDT-Cu offers several distinct advantages, including cost-effectiveness, high selectivity, and the ability to operate at lower temperatures. Notably, the CDT-Cu film exhibits a rough surface, which proves advantageous for facilitating the formation of filament pathways in the electrochemical metallization (ECM)-type resistive random-access memory (ReRAM) device. We systematically investigated the surface roughness of CDT-Cu samples, varying chemical displacement time, to shed light on the influence of the Cu electrode on the electrical performance of the resistive memory devices. The findings indicate that devices subjected to shorter CDT times, which yields rougher surfaces, demonstrate lower operation electric fields and enhanced reliability. This is attributed to the reduced voltage requirements, effectively mitigating the impact of Joule heating during device operation.