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Sensors and Materials, Volume 33, Number 11(2) (2021)
Copyright(C) MYU K.K.
pp. 3941-3948
S&M2735 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2021.3706
Published: November 25, 2021

Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors [PDF]

Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, and Yun-Hwei Shen

(Received May 29, 2021; Accepted November 8, 2021)

Keywords: Zr-doped ZnO, annealing temperature, optical property, electrical property

We investigated the effects of the annealing temperature on the optoelectronic properties of Zr-doped ZnO (ZZO) thin films deposited on glass substrates by radio frequency sputtering and annealed at 200, 300, and 400 °C. It was found by X-ray diffraction analysis that all the deposited thin films had a hexagonal crystal structure with polycrystalline grains oriented along the (0 0 2) direction. Furthermore, the film annealed at 400 ℃ had the lowest resistivity among the films due to the growth of grains, as well as the lowest resistivity of 1.5 × 10−2 Ω·cm, a mobility of 35 cm2V−1s−1, and a carrier concentration of 4.2 × 1019 cm−3. It also had a maximum transmittance of 95% and an energy gap of 3.2 eV. These results show that ZZO thin films subjected to annealing at 400 ℃ are promising for use as stable photosensors.

Corresponding author: Tao-Hsing Chen, Sheng-Lung Tu


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Cite this article
Ming-Yu Yen, Tao-Hsing Chen, Po-Hsun Lai, Sheng-Lung Tu, and Yun-Hwei Shen, Effects of Annealing Temperature on Structural and Optoelectronic Properties of Zr-doped ZnO Thin Films for Photosensors, Sens. Mater., Vol. 33, No. 11, 2021, p. 3941-3948.



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