S&M Young Researcher Paper Award 2020
Recipients: Ding Jiao, Zao Ni, Jiachou Wang, and Xinxin Li [Winner's comments]
Paper: High Fill Factor Array of Piezoelectric Micromachined
Ultrasonic Transducers with Large Quality Factor

S&M Young Researcher Paper Award 2021
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Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
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Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Simulation of Effect of Ar Flow Rate on Silicon Ingot Growth in Directional Solidification System

Xueyan Li, Yao-Chung Yang, Chao-Ming Hsu, Hsien-Wei Tseng, Jie Zhang, and Cheng-Fu Yang

(Received March 23, 2021; Accepted June 2, 2021)

Keywords: simulation, Ar flow rate, silicon ingot growth, polycrystalline silicon, directional solidification system

We used a numerical analysis method to find the effect of the Ar flow rate on the silicon ingot growth in a directional solidification system (DSS) and to find the optimal Ar flow rate for the growth of a polycrystalline silicon ingot. The simulation software used was Fluent and the finite volume method was used to construct the boundary conditions. We used the freeze/melt model to perform the thermal field analysis of ingot growth in a DSS furnace. In the analysis we considered the effect of the Ar flow rate on the thermal conduction, thermal convention, and thermal radiation, which affect the growth of a silicon ingot in a DSS furnace. We found that the Ar flow rate, thermal pads, heaters, and insulated side panels usually affected the growth of a silicon ingot in a DSS furnace. We also simulated the effect of the Ar flow rate on the temperature gradient, heat dissipation rate, and the shape of the solid-liquid phase while changing the temperature field. The analysis results can be used to adjust and optimize the internal parts of a DSS furnace to optimize the process of silicon ingot growth.

Corresponding author: Chao-Ming Hsu, Cheng-Fu Yang

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