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Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 30, Number 3(1) (2018)
Copyright(C) MYU K.K.
pp. 463-469
S&M1509 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2018.1752
Published: February 28, 2018

Effects of a Graphene Oxide Layer on the Resistive Memory Properties of a Cu/GO/SiO2/Pt Structure [PDF]

Chih-Yi Liu, Yu-Xuan Zhang, Chih-Peng Yang, Chun-Hung Lai, Min-Hang Weng, Chang-Sin Ye, and Chun-Kai Huang

(Received July 6, 2017; Accepted October 20, 2017)

Keywords: silicon dioxide, graphene oxide, resistive memory

A Cu/graphene oxide (GO)/SiO2/Pt structure was synthesized in order to investigate the effects of the GO layer on the properties of resistive memory. The resistance of the Cu/GO/SiO2/Pt structure can be reversibly switched between a high-resistance state and a low-resistance state by dc voltages with different polarities. Such resistance switching is dominated by the electrochemical reaction with Cu conducting filaments. The folded and layered structure of the GO film was found to limit the number of available pathways for Cu ion migration, resulting in the formation of fewer Cu conducting filaments in the SiO2 layer. Hence, the GO layer improved the stability of resistance switching. The synthesized Cu/GO/SiO2/Pt structure demonstrated low operating voltages, a low operating power, a high resistance ratio, and good reliability, which makes it suitable for use as a next-generation nonvolatile memory structure.

Corresponding author: Chih-Yi Liu


Cite this article
Chih-Yi Liu, Yu-Xuan Zhang, Chih-Peng Yang, Chun-Hung Lai, Min-Hang Weng, Chang-Sin Ye, and Chun-Kai Huang, Effects of a Graphene Oxide Layer on the Resistive Memory Properties of a Cu/GO/SiO2/Pt Structure, Sens. Mater., Vol. 30, No. 3, 2018, p. 463-469.



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