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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
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MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 18, Number 8 (2006)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 433-444
S&M661 Research Paper Published: 2006 Determination of Electrical Properties of n-Type and p-Type Polycrystalline Silicon Thin Films as Sensor Materials [PDF] Hideo Muro, Takeshi Mitamura and Shigeyuki Kiyota (Received October 25, 2006; Accepted October 25, 2006) Keywords: polycrystalline silicon, microsensor, piezoresistive, thermoelectric
The electrical properties of both n-type and p-type polycrystalline silicon (polysilicon) films for sensor applications have been characterized, together with the basic electrical characteristics of these films. For n-type and p-type polysilicon piezoresistors, the measured longitudinal gauge factors are –15 to –24 and 24 to 31, respectively, whereas the transverse gauge factors are much smaller. The temperature coefficients of resistance are between –1000 and –2000 ppm/K for both n-type and p-type polysilicons. A full-bridge configuration for stress sensors using both n-type and p-type polysilicon piezoresistors is proposed. The measured Seebeck coefficients for n-type and p-type polysilicon films are –0.21 to –0.43 mV/K and 0.21 to 0.28 mV/K, respectively.
Corresponding author: Hideo Muro Cite this article Hideo Muro, Takeshi Mitamura and Shigeyuki Kiyota, Determination of Electrical Properties of n-Type and p-Type Polycrystalline Silicon Thin Films as Sensor Materials, Sens. Mater., Vol. 18, No. 8, 2006, p. 433-444. |
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