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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 36, Number 1(2) (2024)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 199-207
S&M3510 Research Paper of Special Issue https://doi.org/10.18494/SAM4665 Published: January 26, 2024 In/CdTe/Au p–n Gamma-ray Detectors Fabricated Using n-type Layer Formed by Laser-induced Back-side Doping with Nd:YAG Laser [PDF] Taku Miyake, Junichi Nishizawa, Akifumi Koike, Toru Aoki, and Hidenori Mimura (Received September 21, 2023; Accepted November 20, 2023) Keywords: laser doping, pn diode, CdTe gamma-ray detector, indium doping
An n-type layer was formed in p-type CdTe via the laser-induced back-side doping of In with a Nd:YAG laser. Hall effect measurements confirmed the formation of an n-type layer on the In- doped area. The In/CdTe/Au p–n diode was fabricated as a gamma-ray detector via laser-induced back-side doping. A guard-ring structure was introduced into the In anode electrode to realize an electron-collecting-type detector with a low leakage current, although pixelation on the In anode side was difficult. In the In/CdTe/Au p–n gamma-ray detector, rectification behavior was clearly observed, and the leakage current of the central electrode was 13 nA at a reverse voltage of 500 V. The energy spectra of 241Am and 57Co radioisotopes were collected at room temperature and showed energy resolutions (full width at half maximum) of 2.9 and 3.6 keV for gamma rays of 59.5 and 122 keV, respectively.
Corresponding author: Taku Miyake  This work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Taku Miyake, Junichi Nishizawa, Akifumi Koike, Toru Aoki, and Hidenori Mimura, In/CdTe/Au p–n Gamma-ray Detectors Fabricated Using n-type Layer Formed by Laser-induced Back-side Doping with Nd:YAG Laser, Sens. Mater., Vol. 36, No. 1, 2024, p. 199-207. |
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