pp. 2897-2908
S&M3363 Research Paper of Special Issue https://doi.org/10.18494/SAM4426 Published in advance: June 20, 2023 Published: August 23, 2023 Effects of Annealing Temperature on Optical and Electrical Properties of Different Multilayer Film Structures for Photoelectric Sensors [PDF] Tang-Yi Tsai, Chia-Ju Liu, Guan-Lin Guo, Sheng-Lung Tu and Tao-Hsing Chen (Received April 12, 2023; Accepted May 29, 2023) Keywords: multilayer film, TiO2/Nb/ITO sensor, TiO2/Nb/ZnO sensor, optical property, electrical property
In this study, multilayer transparent conductive films were formed by depositing titanium dioxide (TiO2) and zinc oxide (ZnO) or indium tin oxide (ITO) on a glass substrate by radio-frequency magnetron sputtering using different sputtering parameters, and by depositing niobium (Nb) of 99.99% purity as an intermediate layer between the two oxide layers by DC magnetron sputtering. It was found that the amount of crystals in all the multilayer film structures increases with the annealing temperature, the TiO2/Nb/ITO (TNI) multilayer film structure has the best electrical properties when annealed at 500 °C, with the resistivity being 9.22 × 10−4 Ω-cm (with the highest average transmittance being 87.85% at the annealing temperature of 300 °C), and the TNI multilayer film structure also has the highest figure of merit (FOM), i.e., 3.88 × 10−3 Ω−1. However, the TiO2/Nb/ZnO (TNZ) film annealed at 500 °C had the resistivity of 1.63 × 10−2 Ω-cm, the transmittance of 81.20%, and the FOM of 1.66 × 10−8 Ω−1. The results showed that the TNI multilayer film had the best optical and electrical properties. The results of this study indicate that such multilayer film structures are suitable for use as photoelectric sensors.
Corresponding author: Tao-Hsing ChenThis work is licensed under a Creative Commons Attribution 4.0 International License. Cite this article Tang-Yi Tsai, Chia-Ju Liu, Guan-Lin Guo, Sheng-Lung Tu and Tao-Hsing Chen, Effects of Annealing Temperature on Optical and Electrical Properties of Different Multilayer Film Structures for Photoelectric Sensors, Sens. Mater., Vol. 35, No. 8, 2023, p. 2897-2908. |