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Vol. 32, No. 8(2), S&M2292

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Sensors and Materials, Volume 33, Number 6(4) (2021)
Copyright(C) MYU K.K.
pp. 2209-2214
S&M2609 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2021.3325
Published: June 24, 2021

Photo- and Radioluminescence Properties of Ce3+-doped Lu3Al5O12 Thick Film Grown by Chemical Vapor Deposition [PDF]

Shogen Matsumoto, Akihiro Minamino, and Akihiko Ito

(Received January 31, 2021; Accepted April 28, 2021)

Keywords: Lu3Al5O12, chemical vapor deposition, thick film phosphor, scintillator, luminescence

We demonstrate the rapid synthesis of Ce3+-doped Lu3Al5O12 (Ce3+:LuAG) thick film phosphor grown by laser-assisted chemical vapor deposition. The radioluminescence properties of the film are compared with those of Ce3+:LuAG single crystals. The (100) Ce3+-LuAG thick film was epitaxially grown on a (100) Y3Al5O12 substrate at a deposition rate of 16 nm s−1. Under UV and X-ray irradiation, the film emitted a yellow-green light originating from 5d–4f transitions of Ce3+ ions. Under α-ray excitation from an 241Am source, the scintillation decay curve of the Ce3+:LuAG thick film was fitted to two time constants, 32 and 666 ns, associated with the Ce3+ centers and antisite defects in garnet structures, respectively.

Corresponding author: Akihiko Ito


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Cite this article
Shogen Matsumoto, Akihiro Minamino, and Akihiko Ito, Photo- and Radioluminescence Properties of Ce3+-doped Lu3Al5O12 Thick Film Grown by Chemical Vapor Deposition, Sens. Mater., Vol. 33, No. 6, 2021, p. 2209-2214.



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