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Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 32, Number 8(1) (2020)
Copyright(C) MYU K.K.
pp. 2569-2576
S&M2283 Research Paper of Special Issue (Prof. Yang)
Published: August 10, 2020

Carbon Dioxide Sensing Characteristics of AlGaN/GaN High Electron Mobility Transistor with ZnO Nanorods [PDF]

Kwang Hyeon Baik and Soohwan Jang

(Received April 7, 2020; Accepted June 2, 2020)

Keywords: carbon dioxide, gas sensor, AlGaN/GaN, HEMT, ZnO

A CO2 sensor based on an AlGaN/GaN high electron mobility transistor (HEMT) was developed using ZnO nanorods as the sensing material. The sensor showed a reliable response to a wide range of CO2 concentrations from 500 to 100000 ppm at 300 °C. The CO2 response of the device was tested from 25 to 400 °C, and the sensor started to exhibit responsivity to 30000 ppm CO2 gas at 150 °C. The responsivity increased with the ambient temperature until the temperature reached 300 °C, and it decreased from 350 to 400 °C. The maximum responsivity of the sensor with ZnO nanorods was 4.31% for 10% CO2 exposure at 300 °C. In addition, the effect of humidity on the CO2 sensing characteristics was investigated. AlGaN/GaN-heterostructure-based CO2 sensors functionalized with ZnO nanorods have high potential for applications in the chemical, medical, energy, and food industries.

Corresponding author: Soohwan Jang

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Cite this article
Kwang Hyeon Baik and Soohwan Jang, Carbon Dioxide Sensing Characteristics of AlGaN/GaN High Electron Mobility Transistor with ZnO Nanorods, Sens. Mater., Vol. 32, No. 8, 2020, p. 2569-2576.

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