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Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 32, Number 7(1) (2020)
Copyright(C) MYU K.K.
pp. 2321-2328
S&M2261 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2020.2867
Published: July 10, 2020

Photoelectric Properties of SnO2/Ti/GZO Multilayer Thin Film after Annealing at Different Temperatures for Photosensor Applications [PDF]

Chi-Fan Liu, Tao-Hsing Chen, and Yu-Sheng Huang

(Received February 11, 2020; Accepted May 25, 2020)

Keywords: SnO2, multilayer film, annealing temperature, electrical, transmittance

In this study, RF magnetron sputtering is employed to deposit a SnO2/Ti/GZO (TTG) transparent conductive film on a Corning glass substrate to investigate the effect of the annealing temperature on the electrical properties, transmittance characteristics, surface properties, and structural properties of a TTG conductive film. The results show that upon annealing at 300 ℃, the minimum resistance was achieved by the TTG multilayer film, i.e., 1.57 × 10−2 Ω∙cm. Regarding the transmittance characteristics of all multilayer films, it is evident that the higher the annealing temperature, the higher the mean transmittance, but above an annealing temperature of 300 ℃, the transmittance decreases slightly.

Corresponding author: Tao-Hsing Chen


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Cite this article
Chi-Fan Liu, Tao-Hsing Chen, and Yu-Sheng Huang, Photoelectric Properties of SnO2/Ti/GZO Multilayer Thin Film after Annealing at Different Temperatures for Photosensor Applications, Sens. Mater., Vol. 32, No. 7, 2020, p. 2321-2328.



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