Notice of retraction
Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.

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S&M2345 Research Paper of Special Issue

Influence of Environmental Conditions on Electrical Stability of entacene Thin-film Transistors with Cross-linked PVP-co-PMMA Gate Dielectric Layer

Jyothi Chintalapalli, Joel Ndikumana, Sungkeun Baang, and Jaehoon Park

(Received March 2, 2020; Accepted April 16, 2020)

Keywords: thin-film transistor, pentacene, poly(4-vinylphenol-co-methyl methacrylate), bias stress, environmental condition

Gate-bias stress causes changes in the electrical stability of thin-film transistors (TFTs), and this can degrade the device performance. This research highlights the effects of environmental conditions on the electrical stability of pentacene TFTs in which cross-linked poly(4-vinylphenol-co-methyl methacrylate) (PVP-co-PMMA) was utilized as a gate dielectric layer. Under negative gate-bias stress, the fabricated TFTs exposed to ambient air showed a positive threshold voltage shift, whereas the devices under vacuum exhibited a negative threshold voltage shift. Furthermore, consecutive on/off switching operation of pentacene TFTs under ambient air induced an increase in the on-state drain current. These results are explained through the interaction between water molecules and PVP-co-PMMA, which causes the accumulation of holes in the TFT channel region having higher conductance.

Corresponding author: Sungkeun Baang, Jaehoon Park




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