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Notice of retraction
Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials, Volume 31, Number 7(1) (2019)
Copyright(C) MYU K.K.
pp. 2237-2244
S&M1927 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2019.2209
Published: July 9, 2019

Impact of Active Surface Area on Performance and Reliability of Tri-gate FinFET [PDF]

Yi-Lin Yang, Chiao-Feng Chuang, Chih-Jui Lai, Wenqi Zhang, Yun-Hsuan Hsu, Chia-Jung Tsai, Wei-De Lin, Meng-Yen Lin, and Wen-Kuan Yeh

(Received November 29, 2018; Accepted May 8, 2019)

Keywords: active surface area (SA), contact etch stop layer (CESL), FinFET

In this work, a contact etch stop layer (CESL) was found to cause tensile stress above the gate of FinFET devices, and the top tensile stress introduced compressive stress in the channel. With increasing active surface area (SA), a higher compressive stress was observed. The effect of compressive stress became more evident, resulting in a lower current but a higher reliability for nFinFET devices.

Corresponding author: Yi-Lin Yang


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This work is licensed under a Creative Commons Attribution 4.0 International License.

Cite this article
Yi-Lin Yang, Chiao-Feng Chuang, Chih-Jui Lai, Wenqi Zhang, Yun-Hsuan Hsu, Chia-Jung Tsai, Wei-De Lin, Meng-Yen Lin, and Wen-Kuan Yeh, Impact of Active Surface Area on Performance and Reliability of Tri-gate FinFET, Sens. Mater., Vol. 31, No. 7, 2019, p. 2237-2244.



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