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Sensors and Materials
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Sensors and Materials, Volume 31, Number 3(1) (2019)
Copyright(C) MYU K.K.
S&M1810 Research Paper of Special Issue
Published: March 8, 2019
Annealing Cycle Dependence of Thermal Conductivity for Si-Ge-Au Thin Film Analyzed by Thermal Microscopy [PDF]
Tsuyoshi Nishi, Tomohiro Mayama, Hiromichi Ohta, and Yoichi Okamoto
(Received August 24, 2018; Accepted November 9, 2018)
Keywords: thermal effusivity, Si–Ge–Au, amorphous, thin film, thermal microscope, thermal conductivity
The thermal effusivity of a Si–Ge–Au thin film was measured using a thermal microscope. A thin-film sample with sixty-seven artificial intervals each comprising Si (2.0 nm)/Au-doped Ge (2.5 nm) was prepared and annealed more than 20 times. The dependence of the thermal conductivity of the film on the number of annealing cycles was determined using the obtained experimental thermal effusivity data, bulk density, and specific heat capacity. The film thickness (~300 nm) was greater than the thermal diffusion length of the samples. The thermal conductivity of the Si–Ge–Au thin film was satisfactory considering the number of annealing cycles. Thus, we elucidated the annealing effect of thermal conductivity for the Si–Ge–Au thin film.
Corresponding author: Tsuyoshi Nishi, Tomohiro Mayama
This work is licensed under a Creative Commons Attribution 4.0 International License.
Cite this article
Tsuyoshi Nishi, Tomohiro Mayama, Hiromichi Ohta, and Yoichi Okamoto, Annealing Cycle Dependence of Thermal Conductivity for Si-Ge-Au Thin Film Analyzed by Thermal Microscopy, Sens. Mater., Vol. 31, No. 3, 2019, p. 743-749.
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