ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 30, Number 11(2) (2018)
Copyright(C) MYU K.K. All Rights Reserved.
pp. 2531-2539
S&M1696 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2018.2054
Published: November 20, 2018

Supersteep Retrograde Channel on FinFET [PDF]

Yong-Syuan Dai and Yu-Hsien Lin

(Received March 28, 2018; Accepted August 30, 2018)

Keywords: channel engineering, FinFET, supersteep retrograde (SSR) or retrograde technology, technology computer-aided design (TCAD), three-dimensional structure

Supersteep retrograde (SSR) technology can improve the short-channel effects (SCEs) when device size is reduced. Additionally, it can reduce the leakage current of a device. We investigated the optimal process conditions for SSR technology. We determined whether the electromagnetic parameters of N-type and P-type fin field-effect transistors (FinFETs) can be improved using SSR technology through technology computer-aided design (TCAD) simulation. After the simulation, the transfer characteristic curve (ID–VG), Ion, Ioff, drain-induced barrier lowering (DIBL), subthreshold swing (SS), and mobility parameters were employed to determine the advantages and disadvantages of using SSR technology for a FinFET. The results revealed that when SSR technology is used for a FinFET, superior characteristics are observed even when the width and length of the FinFET are reduced. The SSR simulation results reveal that, as the doping concentration in SSR technology increases, the electrical properties of the device improve.

Corresponding author: Yu-Hsien Lin


Cite this article
Yong-Syuan Dai and Yu-Hsien Lin , Supersteep Retrograde Channel on FinFET, Sens. Mater., Vol. 30, No. 11, 2018, p. 2531-2539.



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