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Notice of retraction
Vol. 34, No. 8(3), S&M3042

Notice of retraction
Vol. 32, No. 8(2), S&M2292

Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 30, Number 9(2) (2018)
Copyright(C) MYU K.K.
pp. 2073-2083
S&M1661 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2018.1957
Published: September 28, 2018

First-principles Simulation of Piezoresistivity of Transition Metal Dichalcogenide Monolayers [PDF]

Koichi Nakamura

(Received April 5, 2018; Accepted July 23, 2018)

Keywords: transition metal dichalcogenide, gauge factor, piezoresistivity, first-principles calculation

Longitudinal gauge factors of transition metal dichalcogenide (TMDC) monolayer models have been evaluated by first-principles calculation. TMDC monolayers have a multivalley/multipeak electronic structure, and uniaxial tensile strain causes a significant change in electrical conductivity through carrier redistribution in conduction-band valleys or valence-band peaks for some species of doped TMDC monolayers. A high piezoresistivity was observed selectively depending on the combination of transition metal and chalcogen atoms. In this simulation, a p-doped MoS2 monolayer model gave high longitudinal gauge factors of 94.2 and 87.4 at 20 ℃ in the carrier concentration range of 1017–1019 cm−3.

Corresponding author: Koichi Nakamura


Cite this article
Koichi Nakamura, First-principles Simulation of Piezoresistivity of Transition Metal Dichalcogenide Monolayers, Sens. Mater., Vol. 30, No. 9, 2018, p. 2073-2083.



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