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Vol. 32, No. 8(2), S&M2292

ISSN (print) 0914-4935
ISSN (online) 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Sensors and Materials
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Sensors and Materials, Volume 30, Number 3(1) (2018)
Copyright(C) MYU K.K.
pp. 453-461
S&M1508 Research Paper of Special Issue
https://doi.org/10.18494/SAM.2018.1746
Published: February 28, 2018

Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors [PDF]

Chih-Chiang Wu and Shyr-Long Jeng

(Received May 23, 2017; Accepted November 2, 2017)

Keywords: gallium nitride, cascode, parasitic capacitances

In this work, we examined the electrical characteristics of laboratory-fabricated cascode gallium nitride field-effect transistors (GaN FETs) and analyzed their parasitic capacitances. The calculated results were in good agreement with the experimental results and showed that commercial GaN FETs have superior switching performance, whereas laboratory-fabricated GaN FETs require further improvement.

Corresponding author: Shyr-Long Jeng


Cite this article
Chih-Chiang Wu and Shyr-Long Jeng, Comparing of Parasitic Capacitances on Packaged Cascode Gallium Nitride Field-effect Transistors, Sens. Mater., Vol. 30, No. 3, 2018, p. 453-461.



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