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Print: ISSN 0914-4935
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
Online: ISSN 2435-0869
Sensors and Materials
is an international peer-reviewed open access journal to provide a forum for researchers working in multidisciplinary fields of sensing technology.
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Sensors and Materials
is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
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Sensors and Materials
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is covered by Science Citation Index Expanded (Clarivate Analytics), Scopus (Elsevier), and other databases.
Instructions to authors
English 日本語
Instructions for manuscript preparation
English 日本語
Template
English
Publisher
MYU K.K.
Sensors and Materials
1-23-3-303 Sendagi,
Bunkyo-ku, Tokyo 113-0022, Japan
Tel: 81-3-3827-8549
Fax: 81-3-3827-8547
MYU Research, a scientific publisher, seeks a native English-speaking proofreader with a scientific background. B.Sc. or higher degree is desirable. In-office position; work hours negotiable. Call 03-3827-8549 for further information.
MYU Research
(proofreading and recording)
MYU K.K.
(translation service)
The Art of Writing Scientific Papers
(How to write scientific papers)
(Japanese Only)
Sensors and Materials, Volume 29, Number 11 (2017)
Copyright(C) MYU K.K.
Copyright(C) MYU K.K.
|
pp. 1523-1529
S&M1446 Research Paper of Special Issue https://doi.org/10.18494/SAM.2017.1661 Published: November 24, 2017 80–100 V Low-Side Lateral Double-Diffused Metal Oxide Semiconductor Device with Sided Isolation of 0.35 um CMOS-Compatible Process [PDF] Shao-Ming Yang, Gene Sheu, and Chirag Aryadeep (Received April 20, 2017; Accepted August 15, 2017) Keywords: linear p-top, charge balance, multiple RESURF, specific on-resistance, side isolation
In this study, a novel 80–100 V multiple reduced surface field (RESURF) lateral doublediffused metal oxide semiconductor (LDMOS) transistor with shallow trench isolation (STI) on both sides of the structure is developed and simulated using a Sentaurus process simulator. The proposed multiple RESURF LDMOS structure achieves benchmark specific on-state resistance while maintaining breakdown voltages of 80 and 100 V with better safe-operating area (SOA) performance. The key feature of this novel n-channel LDMOS (NLDMOS) device is the presence of linear p-top rings in the n-drift region. The optimization of the linear p-top mask design and concentration of p-top in the region is performed in order to achieve benchmark on-state resistance with the desired breakdown voltage. Linear p-top helps the diffusion current to move faster in the drift region, which helps to reduce on-state resistance.
Corresponding author: Shao-Ming Yang Cite this article Shao-Ming Yang, Gene Sheu, and Chirag Aryadeep, 80–100 V Low-Side Lateral Double-Diffused Metal Oxide Semiconductor Device with Sided Isolation of 0.35 um CMOS-Compatible Process, Sens. Mater., Vol. 29, No. 11, 2017, p. 1523-1529. |
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